Method to form wrap-around contact for finFET
US9159794B2 · kind B2 · utility
14Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Feb 17, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide an improved contact formation process for a finFET. Epitaxial semiconductor regions are formed on the fins. A contact etch stop layer (CESL) is deposited on the epitaxial regions. A nitride-oxide conversion process converts a portion of the nitride CESL into oxide. The oxide-converted portions are removed using a selective etch process, and a fill metal is deposited which is in direct physical contact with the epitaxial regions. Damage, such as gouging, of the epitaxial regions is minimized during this process, resulting in an improved contact for finFETs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.