Patent · US Active

Semiconductor device and RC-IGBT with zones directly adjoining a rear side electrode

US9159819B2 · kind B2 · utility

4Cited by

3References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Frank Pfirsch · Birkenfeld, DE
Dorothea Werber · Munich, DE

Key dates

Filing date	Feb 20, 2014
Grant date	Oct 13, 2015
Priority date	—
Expiry date	Apr 14, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/117
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a drift zone of a first conductivity type in a semiconductor body. Controllable cells are configured to form a conductive channel connected with the drift zone in a first state. First zones of the first conductivity type as well as second zones and a third zone of a complementary second conductivity type are between the drift zone and a rear side electrode, respectively. The first, second and third zones directly adjoin the rear side electrode. The third zone is larger and has a lower mean emitter efficiency than the second zones.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.