Two-terminal reversibly switchable memory device
US9159913B2 · kind B2 · utility
3Cited by
122References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 19, 2014 |
| Grant date | Oct 13, 2015 |
| Priority date | — |
| Expiry date | Aug 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.