Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse
US9165644B2 · kind B2 · utility
24Cited by
21References
24Claims
0Family size
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Key dates
| Filing date | May 11, 2012 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of operating a resistive switching device includes applying a signal comprising a pulse on a first terminal of a two terminal resistive switching device having the first terminal and a second terminal. The resistive switching device has a first state and a second state. The pulse includes a first ramp from a first voltage to a second voltage over a first time period. The first time period is at least 0.1 times a total time period of the pulse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.