Patent · US Active

Method for patterning differing critical dimensions at sub-resolution scales

US9165765B1 · kind B1 · utility

9Cited by

3References

20Claims

0Family size

Assignee

TOKYO ELECTRON LIMITED · JP

Inventors

Angelique Raley · Halfmoon, US
Akiteru Ko · Schenectady, US

Key dates

Filing date	Sep 9, 2014
Grant date	Oct 20, 2015
Priority date	—
Expiry date	Sep 9, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32105
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Techniques include a plasma oxidation treatment to modify a material to a predetermined thickness around a mandrel or spacer or other structure. This plasma oxidation is then followed by a chemical oxide removal treatment. With only a portion of the structures being oxidized, or by selective masking a portion of oxidized structures, the chemical oxide removal treatment essentially shrinks only a portion of the structures, thereby yielding structures having differing critical dimensions which can function as etch masks to transfer patterns into one or more underlying layers. Accordingly, structures having differing critical dimensions can be fabricated at sub-resolution scales.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.