Method of patterning a low-k dielectric film
US9165783B2 · kind B2 · utility
117Cited by
6References
17Claims
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Key dates
| Filing date | Oct 22, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Oct 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02126
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.
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