Bulk finFET semiconductor-on-nothing integration
US9166023B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Aug 9, 2013 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
Abstract
Methods and structures for forming fully insulated finFETs beginning with a bulk semiconductor substrate are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first epitaxial layer may be sacrificial. A final gate structure may be formed around the fin structures, and the first epitaxial layer removed to form a void between a fin and the substrate. The void may be filled with an insulator to fully insulate the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.