Magnetic random access memory with multiple free layers
US9166143B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Jul 5, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a magnetic random access memory element comprising a first magnetic reference layer, a first insulating tunnel junction layer, a first magnetic free layer, a first coupling layer, a second magnetic free layer, a second coupling layer, a third magnetic free layer, a second insulating tunnel junction layer, and a second magnetic reference layer formed in sequence. The first and second magnetic reference layers have respectively a first and second fixed magnetization directions that are substantially perpendicular to respective layer planes and are substantially opposite to each other. The first, second, and third magnetic free layers have respectively a first, second, and third variable magnetization directions that are substantially perpendicular to respective layer planes. The second variable magnetization direction may be parallel or anti-parallel to the first and third variable magnetization directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.