Electric field assisted MRAM and method for using the same
US9166146B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2014 |
| Grant date | Oct 20, 2015 |
| Priority date | — |
| Expiry date | Mar 23, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a spin transfer torque magnetic random access memory (STT-MRAM) device having a plurality of memory elements. Each of the plurality of memory elements comprises a magnetic reference layer with a first invariable magnetization direction substantially perpendicular to layer plane thereof; a magnetic free layer separated from the magnetic reference layer by an insulating tunnel junction layer with the magnetic free layer having a variable magnetization direction substantially perpendicular to layer plane thereof; a dielectric layer formed in contact with the magnetic free layer opposite the insulating tunnel junction layer; and a first conductive layer formed in contact with the dielectric layer opposite the magnetic free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.