Patent · US Active

Low noise semiconductor devices

US9171726B2 · kind B2 · utility

0Cited by

8References

29Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Giovanni Calabrese · Munich, DE
Domagoj Siprak · Munich, DE
Wolfgang Molzer · Ottobrunn, DE
Uwe Hodel · Munich, DE

Key dates

Filing date	Nov 6, 2009
Grant date	Oct 27, 2015
Priority date	—
Expiry date	Jun 4, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/2658
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor devices may be configured to reduce noise in the devices. For example, a semiconductor device may be configured or made with a first doped region within a semiconductor substrate to operate as an extended drain region, a trench isolation region, a second doped region between the first doped region and the trench isolation region, wherein the trench isolation region and the second doped region may be at least partially formed within the first doped region. Additionally, or alternatively, the second doped region may be within the first doped region and at least partially surround the trench isolation region, the first and second doped regions may have the same conductivity type, and the second doped region may have a higher conductivity than the first doped region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.