Apparatus for delivering precursor gases to an epitaxial growth substrate
US9175419B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2008 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Apr 17, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T137/8593
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention provides gas injector apparatus that extends into a growth chamber in order to provide more accurate delivery of thermalized precursor gases. The improved injector can distribute heated precursor gases into a growth chamber in flows that are spatially separated from each other up until they impinge on a growth substrate and that have volumes adequate for high-volume manufacture. Importantly, the improved injector is sized and configured so that it can fit into existing commercial growth chambers without hindering the operation of mechanical and robot substrate-handling equipment used with such chambers. This invention is useful for the high-volume growth of numerous elemental and compound semiconductors, and particularly useful for the high-volume growth of Group III-V compounds and GaN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.