Memory device with control gate oxygen diffusion control and method of making thereof
US9177808B2 · kind B2 · utility
0Cited by
26References
20Claims
0Family size
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Key dates
| Filing date | May 22, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | May 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
Abstract
An embodiment relates to a memory device that includes a semiconductor channel, a tunnel dielectric located over the semiconductor channel, a charge storage region located over the tunnel dielectric, a blocking dielectric located over the charge storage region, and a control gate located over the blocking dielectric. An interface between the blocking dielectric and the control gate substantially prevents oxygen diffusion from the blocking dielectric into the control gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.