Three dimensional NAND devices with air gap or low-k core
US9177966B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Jul 8, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A monolithic three dimensional NAND string device includes a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes extending substantially parallel to the major surface of the substrate in different device levels, a blocking dielectric located in contact with the plurality of control gate electrodes, at least one charge storage region located in contact with the blocking dielectric, and a tunnel dielectric located between the at least one charge storage region and the semiconductor channel. The semiconductor channel is a hollow body surrounding a middle region and at least one of an air gap or a low-k insulating material having a dielectric constant of less than 3.9 is located in the middle region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.