Methods to improve electrical performance of ZrO2 based high-K dielectric materials for DRAM applications
US9178006B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 10, 2014 |
| Grant date | Nov 3, 2015 |
| Priority date | — |
| Expiry date | Feb 10, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/33
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly-doped or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly-doped or non-doped material will become crystalline (≧30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.