Contact bars with reduced fringing capacitance in a semiconductor device

US9184095B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Thilo Scheiper · Dresden, DE
• Sven Beyer · Dresden, DE
• Uwe Griebenow · Markkleeberg, DE
• Jan Hoentschel · Dresden, DE
• Andy Wei · Queensbury, US

Key dates

• Filing date: Nov 2, 2010
• Grant date: Nov 10, 2015
• Expiry date: Sep 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated semiconductor devices, the contact structure may be formed on the basis of contact bars formed in a lower portion of an interlayer dielectric material, which may then be contacted by contact elements having reduced lateral dimensions so as to preserve a desired low overall fringing capacitance. The concept of contact bars of reduced height level may be efficiently combined with sophisticated replacement gate approaches.