Topological method to build self-aligned MTJ without a mask
US9190260B1 · kind B1 · utility
31Cited by
2References
14Claims
0Family size
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Key dates
| Filing date | Nov 13, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Nov 13, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a self-aligned MTJ without using a photolithography mask and the resulting device are provided. Embodiments include forming a first electrode over a metal layer, the metal layer recessed in a low-k dielectric layer; forming a MTJ layer over the first electrode; forming a second electrode over the MTJ layer; removing portions of the second electrode, the MTJ layer, and the first electrode down to the low-k dielectric layer; forming a silicon nitride-based layer over the second electrode and the low-k dielectric layer; and planarizing the silicon nitride-based layer down to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.