Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
US9190320B2 · kind B2 · utility
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6Claims
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Assignee
Inventors
Key dates
| Filing date | Jan 24, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Aug 10, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.