Patent · US Active

Method for producing a copper layer on a semiconductor body using a printing process

US9190322B2 · kind B2 · utility

2Cited by

4References

19Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Martin Mischitz · Wernberg, AT
Manfred Schneegans · Vaterstetten, DE
Markus Heinrici · Klagenfurt, AT

Key dates

Filing date	Jan 24, 2014
Grant date	Nov 17, 2015
Priority date	—
Expiry date	Jan 24, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing a metal layer on a wafer is described. In one embodiment the method comprises providing a semiconductor wafer including a coating, printing a metal particle paste on the semiconductor wafer thereby forming a metal layer and heating the metal layer in a reductive gas for sintering the metal particle paste or for annealing a sintered metal particle paste in an oven.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.