Semiconductor structure having a source and a drain with reverse facets
US9190471B2 · kind B2 · utility
35Cited by
10References
11Claims
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Assignee
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Key dates
| Filing date | Apr 13, 2012 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jun 1, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure including a semiconductor wafer. The semiconductor wafer includes a gate structure, a first trench in the semiconductor wafer adjacent to a first side of the gate structure and a second trench adjacent to a second side of the gate structure, the first and second trenches filled with a doped epitaxial silicon to form a source in the filled first trench and a drain in the filled second trench such that each of the source and drain are recessed and have an inverted facet. In a preferred exemplary embodiment, the epitaxial silicon is doped with boron.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.