Plasma vapor deposition
US9194036B2 · kind B2 · utility
1Cited by
10References
46Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2007 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Aug 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3423
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma vapor deposition system is described for forming a feature on a semiconductor wafer. The plasma vapor deposition comprises a primary target electrode and a plurality of secondary target electrodes. The deposition is performed by sputtering atoms off the primary and secondary target electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.