Through substrate features in semiconductor substrates

US9196670B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gunther Mackh · Dresden, DE
• Uwe Siedel · Munich, DE
• Rainer Leuschner · Regensburg, DE

Key dates

• Filing date: Feb 13, 2014
• Grant date: Nov 24, 2015
• Expiry date: Feb 13, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.