Method and apparatus for plasma dicing a semi-conductor wafer
US9202721B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Feb 10, 2014 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jun 12, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S414/139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for plasma processing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; loading a work piece onto the work piece support, the work piece having a support film, a frame and the substrate; providing a cover ring above the work piece, the cover ring having at least one perforated region, and at least one non-perforated region; generating a plasma using the plasma source; and processing the work piece using the generated plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.