Patent · US Active

Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching

US9209281B2 · kind B2 · utility

0Cited by

15References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Roland Rupp · Achern, DE
Stefan Woehlert · Villach, AT
Thomas Gutt · Taufkirchen, DE
Michael Treu · Villach, AT

Key dates

Filing date	Apr 23, 2007
Grant date	Dec 8, 2015
Priority date	—
Expiry date	May 24, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a device comprises depositing one or more metallization layers to a substrate, locally heating an area of the one or more metallization layers to obtain a substrate/metallization-layer compound or a metallization-layer compound, the compound comprising an etch-selectivity toward an etching medium which is different to that of the one or more metallization layers outside the area, and removing the one or more metallization layers in the area or outside the area, depending on the etching selectivity in the area or outside the area, by etching with the etching medium to form the device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.