Charge compensation semiconductor devices

US9209292B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Anton Mauder · Kolbermoor, DE
• Joachim Weyers · Grevesmühlen, DE
• Franz Hirler · Isen, DE
• Markus Schmitt · Neubiberg, DE
• Armin Willmeroth · Friedberg, DE
• Björn Fischer · Saerbeck, DE
• Stefan Gamerith · Villach, AT

Key dates

• Filing date: Nov 15, 2013
• Grant date: Dec 8, 2015
• Expiry date: Nov 15, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A field-effect semiconductor device includes a semiconductor body having a first surface and an edge, an active area, and a peripheral area between the active area and the edge, a source metallization on the first surface and a drain metallization. In the active area, first conductivity type drift portions alternate with second conductivity type compensation regions. The drift portions contact the drain metallization and have a first maximum doping concentration. The compensation regions are in Ohmic contact with the source metallization. The peripheral area includes a first edge termination region and a second semiconductor region in Ohmic contact with the drift portions having a second maximum doping of the first conductivity type which lower than the first maximum doping concentration by a factor of ten. The first edge termination region of the second conductivity type adjoins the second semiconductor region and is in Ohmic contact with the source metallization.