Integrated circuit with matching threshold voltages and method for making same
US9214399B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
An integrated circuit having a substrate, a buffer layer formed over the substrate, a barrier layer formed over the buffer layer, and an isolation region that isolates an enhancement mode device from a depletion mode device. The integrated circuit further includes a first gate contact for the enhancement mode device that is disposed in one gate contact recess and a second gate contact for the depletion mode device that is disposed in a second gate contact recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.