Patent · US Active

Integrated circuit with matching threshold voltages and method for making same

US9214399B2 · kind B2 · utility

1Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 30, 2014
Grant dateDec 15, 2015
Priority date
Expiry dateJul 30, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/111

Abstract

An integrated circuit having a substrate, a buffer layer formed over the substrate, a barrier layer formed over the buffer layer, and an isolation region that isolates an enhancement mode device from a depletion mode device. The integrated circuit further includes a first gate contact for the enhancement mode device that is disposed in one gate contact recess and a second gate contact for the depletion mode device that is disposed in a second gate contact recess.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.