Method of forming a HEMT semiconductor device and structure therefor
US9214423B2 · kind B2 · utility
1Cited by
6References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Feb 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.