GaN transistors with polysilicon layers for creating additional components
US9214461B2 · kind B2 · utility
7Cited by
10References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2014 |
| Grant date | Dec 15, 2015 |
| Priority date | — |
| Expiry date | Jul 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit. The GaN device includes an EPI structure and an insulating material disposed over EPI structure. Furthermore, one or more polysilicon layers are disposed in the insulating material with the polysilicon layers having one or more n-type regions and p-type regions. The device further includes metal interconnects disposed on the insulating material and vias disposed in the insulating material layer that connect source and drain metals to the n-type and p-type regions of the polysilicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.