Methods of forming a replacement gate structure having a gate electrode comprised of a deposited intermetallic compound material
US9218975B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Aug 17, 2012 |
| Grant date | Dec 22, 2015 |
| Priority date | — |
| Expiry date | Feb 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are various methods of forming a replacement gate structure with a gate electrode comprised of a deposited intermetallic compound material. In one example, the method includes removing at least a sacrificial gate electrode structure to define a gate cavity, forming a gate insulation layer in the gate cavity, performing a deposition process to deposit an intermetallic compound material in the gate cavity above the gate insulation layer, and performing at least one process operation to remove portions of intermetallic compound material positioned outside of the gate cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.