Hot-carrier injection programmable memory and method of programming such a memory
US9224482B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Oct 30, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6894
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to a memory comprising at least one word line comprising a row of split gate memory cells each comprising a selection transistor section comprising a selection gate and a floating-gate transistor section comprising a floating gate and a control gate. According to the present disclosure, the memory comprises a source plane common to the memory cells of the word line, to collect programming currents passing through memory cells during their programming, and the selection transistor sections of the memory cells are connected to the source plane. A programming current control circuit is configured to control the programming current passing through the memory cells by acting on a selection voltage applied to a selection line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.