Inverted-T word line and formation for non-volatile storage
US9224746B2 · kind B2 · utility
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6References
25Claims
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Key dates
| Filing date | Nov 5, 2013 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Nov 5, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A non-volatile memory system, comprising non-volatile storage device with word lines having an inverted T-shape over floating gates. The inverted T-shape shape has a wider bottom portion and a thinner top portion. The thinner top portion increases the separation between adjacent word lines relative to the separation between the wider bottom portions. An air gap may separate adjacent word lines. The thinner top portion of the word lines increases the path length between adjacent word lines. The likelihood of word line to word line short may be decreased by reducing the electric field between adjacent word lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.