Replacement gate FinFET structures with high mobility channel

US9224840B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Stefan Flachowsky · Dresden, DE
• Ralf Illgen · Dresden, DE
• Jan Hoentschel · Dresden, DE

Key dates

• Filing date: Jul 10, 2012
• Grant date: Dec 29, 2015
• Expiry date: Jan 22, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/017

Abstract

A method is disclosed for fabricating an integrated circuit in a replacement-gate process flow utilizing a dummy-gate structure overlying a plurality of fin structures. The method includes removing the dummy-gate structure to form a first void space, depositing a shaper material to fill the first void space, removing a portion of the plurality of fin structures to form a second void space, epitaxially growing a high carrier mobility material to fill the second void space, removing the shaper material to form a third void space, and depositing a replacement metal gate material to fill the third void space.