Semiconductor device and method of fabricating the same
US9224864B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Aug 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/121
Abstract
A semiconductor device includes a fin structure, an insulating structure, a protruding structure, an epitaxial structure, and a gate structure. The fin structure and the insulating structure are disposed on the substrate. The protruding structure is in direct contact with the substrate and partially protrudes from the insulating structure, and the protruding structure is the fin structure. The epitaxial structure is disposed on a top surface of the fin structure and completely covers the top surface of the fin structure. In addition, the epitaxial structure has a curved top surface. The gate structure covers the fin structure and the epitaxial structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.