Current-limiting electrodes
US9224951B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 21, 2014 |
| Grant date | Dec 29, 2015 |
| Priority date | — |
| Expiry date | Jul 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/828
Abstract
A resistive-switching memory (ReRAM cell) has a current-limiting electrode layer that combines the functions of an embedded resistor, an outer electrode, and an intermediate electrode, reducing the thickness of the ReRAM stack and simplifying the fabrication process. The materials include compound nitrides of a transition metal and one of aluminum, boron, or silicon. In experiments with tantalum silicon nitride, peak yield in the desired resistivity range corresponded to ˜24 at % silicon and ˜32 at % nitrogen, believed to optimize the trade-off between inhibiting TaSi2 formation and minimizing nitrogen diffusion. A binary metal nitride may be formed at one or more of the interfaces between the current-limiting electrode and neighboring layers such as metal-oxide switching layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.