Method for fabricating semiconductor device and the semiconductor device
US9230799B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jan 23, 2012 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jan 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes forming a gate insulating film, in which at least one film selected from the group of a SiO2 film and an Al2O3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.