NAND string containing self-aligned control gate sidewall cladding
US9230971B2 · kind B2 · utility
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23References
8Claims
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Key dates
| Filing date | Jan 28, 2015 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Jan 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method of making a NAND string includes forming a tunnel dielectric over a semiconductor channel, forming a charge storage layer over the tunnel dielectric, forming a blocking dielectric over the charge storage layer, and forming a control gate layer over the blocking dielectric. The method also includes patterning the control gate layer to form a plurality of control gates separated by trenches, and reacting a first material with exposed sidewalls of the plurality of control gates to form self aligned metal-first material compound sidewall spacers on the exposed sidewalls of the plurality of control gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.