Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory device
US9230980B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Aug 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory film layer is formed in a memory opening through an alternating stack of first material layers and second material layers. A sacrificial material layer is deposited on the memory film layer. Horizontal portions of the sacrificial material layer and the memory film layer at the bottom of the memory opening is removed by an anisotropic etch to expose a substrate underlying the memory opening, while vertical portions of the sacrificial material layer protect vertical portions of the memory film layer. After removal of the sacrificial material layer selective to the memory film, a doped semiconductor material layer can be formed directly on the exposed material in the memory opening and on the memory film as a single material layer to form a semiconductor channel of a memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.