Method for treating the surface of a silicon substrate
US9231062B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2013 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | May 31, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24355
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a method for chemically treating the surface condition of a silicon substrate for the roughness contrast characterized in that it comprises at least two successive treatment cycles, with each treatment cycle comprising a first step including placing in contact the silicon substrate with a first solution containing water diluted hydrofluoric (HF) acid and then a second step carried out at a temperature of less than 40° C., comprising placing in contact the silicon layer with a second solution containing water (H2O) diluted ammonium hydroxide (NH4OH) and hydrogen peroxide (H2O2), in order to obtain a roughness of less than 0.100 nanometer on a 1 μm×1 μm area upon completion of the treatment cycles.The invention will be applied in the field of microelectronics for the production of transistors, of surfaces for photovoltaic panels or for direct molecular bonding.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.