Doped narrow band gap nitrides for embedded resistors of resistive random access memory cells
US9231203B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2014 |
| Grant date | Jan 5, 2016 |
| Priority date | — |
| Expiry date | Dec 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
Abstract
Provided are memory cells, such as resistive random access memory (ReRAM) cells, and methods of fabricating such cells. A cell includes an embedded resistor and resistive switching layer connected in series within the embedded resistor. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state. The embedded resistor includes a stoichiometric nitride that has a bandgap of less than 2 eV. The embedded resistor is configured to maintain a substantially constant resistance throughout fabrication and operation of the cell, such as annealing the cell and subjecting the cell to forming and switching signals. The stoichiometric nitride may be one of hafnium nitride, zirconium nitride, or titanium nitride. The embedded resistor may also include a dopant, such as tantalum, niobium, vanadium, tungsten, molybdenum, or chromium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.