Soft and conditionable chemical mechanical polishing pad stack
US9233451B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | May 31, 2013 |
| Grant date | Jan 12, 2016 |
| Priority date | — |
| Expiry date | Mar 29, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G18/6644
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing pad stack is provided containing: a polishing layer; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm3; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.