Raised source/drain EPI with suppressed lateral EPI overgrowth

US9236452B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kwan-Yong Lim · Plano, US
• Jody A. Fronheiser · Delmar, US
• Christopher M. Prindle · Poughkeepsie, US

Key dates

• Filing date: May 23, 2014
• Grant date: Jan 12, 2016
• Expiry date: Jun 19, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/834

Abstract

A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions.