Multiple vapor sources for vapor deposition
US9238865B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2012 |
| Grant date | Jan 19, 2016 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor deposition method and apparatus including at least two vessels containing a same first source chemical. A controller is programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels, each of the doses having a substantially consistent concentration of the first source chemical. The apparatus may also include at least two vessels containing a same second source chemical. The controller can be programmed to simultaneously pulse to the reaction space doses or pulses of a gas from the vessels containing the second source chemical, each of the doses having a substantially consistent concentration of the second source chemical. The second source chemical can be pulsed to the reaction space after the reaction space is purged of an excess of the first source chemical.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.