Patent · US Active

IGBT with emitter electrode electrically connected with impurity zone

US9240450B2 · kind B2 · utility

1Cited by

3References

13Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Dorothea Werber · Munich, DE
Volodymyr Komarnitskyy · Villach, AT
Thomas Gutt · Taufkirchen, DE

Key dates

Filing date	Feb 12, 2014
Grant date	Jan 19, 2016
Priority date	—
Expiry date	Mar 3, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/251
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a semiconductor body including a drift zone of a first conductivity type, an emitter region of a second, complementary conductivity type configured to inject charge carriers into the drift zone, and an emitter electrode. The emitter electrode includes a metal silicide layer in direct ohmic contact with the emitter region. A net impurity concentration in a portion of the emitter region directly adjoining the metal silicide layer is at most 1×1017 cm−3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.