Methods of forming lateral and vertical FinFET devices and the resulting product

US9245885B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Ruilong Xie · Niskayuna, US
• Andreas Knorr · Saratoga Springs, US

Key dates

• Filing date: Mar 31, 2015
• Grant date: Jan 26, 2016
• Expiry date: Mar 31, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6219

Abstract

One illustrative method disclosed herein includes, among other things, forming first and second recessed gate structures, recessing the second recessed gate structure so as to define a further recessed second gate structure that exposes a channel structure within a gate cavity, forming first and second gate cap layers in first and second replacement gate cavities, respectively, forming a recess in the second gate cap layer that exposes the channel structure, forming a semiconductor material on the exposed portion of the channel structure within the recess in the second gate cap layer so as to define a first source/drain region for the vertical FinFET device, and forming various contact structures to the gates of the devices and the first source/drain region.