Semiconductor device having high mobility channel

US9245971B2 · kind B2 · utility

Assignee

• QUALCOMM Incorporated · US

Inventors

• Bin Yang · San Diego, US
• P R Chidambaram · Richardson, US
• John Jianhong Zhu · San Diego, US
• Jihong Choi · San Diego, US
• Da Yang · San Diego, US
• Ravi M. Todi · Poughkeepsie, US
• Giridhar Nallapati · San Diego, US
• Chock Hing Gan · Singapore, SG
• Ming Cai · Hopewell Junction, US
• Samit Sengupta · San Jose, US

Key dates

• Filing date: Sep 27, 2013
• Grant date: Jan 26, 2016
• Expiry date: Dec 20, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.