IGBT with buried emitter electrode
US9245985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2013 |
| Grant date | Jan 26, 2016 |
| Priority date | — |
| Expiry date | Mar 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
There are disclosed herein various implementations of an insulated gate bipolar transistor (IGBT) with buried emitter electrodes. Such an IGBT may include a collector at a bottom surface of a semiconductor substrate, a drift region having a first conductivity type situated over the collector, and a base layer having a second conductivity type opposite the first conductivity type situated over the drift region. In addition, such an IGBT may include deep insulated trenches extending from a semiconductor surface above the base layer, into the drift region, each of the deep insulated trenches having a buried emitter electrode disposed therein. The IGBT may further include an active cell including an emitter, a gate trench with a gate electrode disposed therein, and an implant zone situated, between adjacent deep insulated trenches. The implant zone is formed below the base layer and has the first conductivity type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.