Bias temperature instability state detection and correction
US9251890B1 · kind B1 · utility
5Cited by
13References
20Claims
0Family size
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Key dates
| Filing date | Dec 19, 2014 |
| Grant date | Feb 2, 2016 |
| Priority date | — |
| Expiry date | Dec 19, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/12015
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device with an age-detect-and-correct (ADAC) circuit that detects skew caused by bias temperature instability fatigue (that is, bias temperature instability stress accumulated over time), and counters skew by selectively adjusting the proportion (measured temporally) of active state operation to idle state operation. Also, a memory burn-in device using a similar ADAC circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.