Patent · US Active

Method for permanent bonding of wafers

US9252042B2 · kind B2 · utility

1Cited by

4References

30Claims

0Family size

Assignee

EV GROUP E. THALLNER GMBH · AT

Inventors

Thomas Plach · Linz, AT
Kurt Hingerl · Steyr, AT
Markus Wimplinger · Ried im Innkreis, AT
Christoph Flotgen · Pramerdorf, AT

Key dates

Filing date	Jan 25, 2011
Grant date	Feb 2, 2016
Priority date	—
Expiry date	Apr 11, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/20106
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate according to the following steps: forming a reservoir in a surface layer on the first contact surface, at least partially filling the reservoir with a first educt or a first group of educts, contacting the first contact surface with the second contact surface for formation of a prebond connection, and forming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer of the second substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.