Patent · US Active

Semiconductor device and method of forming EWLB semiconductor package with vertical interconnect structure and cavity region

US9252172B2 · kind B2 · utility

31Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 31, 2011
Grant dateFeb 2, 2016
Priority date
Expiry dateJan 18, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/1461
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device has a substrate containing a transparent or translucent material. A spacer is mounted to the substrate. A first semiconductor die has an active region and first conductive vias electrically connected to the active region. The active region can include a sensor responsive to light received through the substrate. The first die is mounted to the spacer with the active region positioned over an opening in the spacer and oriented toward the substrate. An encapsulant is deposited over the first die and substrate. An interconnect structure is formed over the encapsulant and first die. The interconnect structure is electrically connected through the first conductive vias to the active region. A second semiconductor die having second conductive vias can be mounted to the first die with the first conductive vias electrically connected to the second conductive vias.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.