Resistive switching devices having a switching layer and an intermediate electrode layer and methods of formation thereof

US9252359B2 · kind B2 · utility

Assignee

• Adesto Technologies Corporation · US

Inventors

• John Ross Jameson · Burlingame, US
• John Sanchez · Palo Alto, US
• Wei Ti Lee · San Jose, US
• Foroozan Sarah Koushan · San Jose, US

Key dates

• Filing date: Mar 14, 2013
• Grant date: Feb 2, 2016
• Expiry date: Aug 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/80

Abstract

In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node.