Patent · US Active

Printing minimum width semiconductor features at non-minimum pitch and resulting device

US9263349B2 · kind B2 · utility

0Cited by

10References

11Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Sonia Ghosh · San Diego, US
Randy W. Mann · Jericho, US
Norman Chen · Poughkeepsie, US
Shaowen Gao · Shanghai, CN

Key dates

Filing date	Nov 8, 2013
Grant date	Feb 16, 2016
Priority date	—
Expiry date	Nov 8, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02T10/82
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Methods for forming a semiconductor layer, such as a metal1 layer, having minimum width features separated by a distance greater than a minimum pitch, and the resulting devices are disclosed. Embodiments may include determining a first shape and a second shape having a minimum width within a semiconductor layer, wherein a distance between the first shape and the second shape is greater than a minimum pitch, determining an intervening shape between the first shape and the second shape, and designating a dummy shape within the intervening shape, wherein the dummy shape is at the minimum pitch from the first shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.